APA (7th ed.) Citation

Saxena, R. R., Fouquet, J. E., Sardi, V. M., & Moon, R. L. (1988). High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine. American Institute of Physics (AIP).

Chicago Style (17th ed.) Citation

Saxena, R. R., J. E. Fouquet, V. M. Sardi, and R. L. Moon. High Quality InP Layers Grown by Organometallic Vapor Phase Epitaxy Using Tertiarybutylphosphine and Phosphine. Woodbury, NY: American Institute of Physics (AIP), 1988.

MLA (9th ed.) Citation

Saxena, R. R., et al. High Quality InP Layers Grown by Organometallic Vapor Phase Epitaxy Using Tertiarybutylphosphine and Phosphine. American Institute of Physics (AIP), 1988.