Carrier-lifetime control of photochemical dry etching using elevated impurity concentrations
Ashby, C. I. H. ; Myers, D. R. ; Vawter, G. A. ; Biefeld, R. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Virtually total suppression of carrier-driven photochemical etching of semi-insulating GaAs, n-GaAs, and n+-GaAs has been achieved by indiffusion of Zn to a surface carrier concentration greater than 1020/cm3. This technique for photochemical reaction suppression can be used as a self-aligned etching technology for semiconductor device fabrication.
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| Type of Medium: |
Electronic Resource
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| URL: |