Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces
Colas, E. ; Kapon, E. ; Simhony, S. ; Cox, H. M. ; Bhat, R. ; Kash, K. ; Lin, P. S. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
Woodbury, NY : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289632500121600 |
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| autor | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. |
| autorsonst | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. |
| book_url | http://dx.doi.org/10.1063/1.101624 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218296088 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1989 |
| publikationsjahr_facette | 1989 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1989 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 55 (1989), S. 867-869 |
| search_space | articles |
| shingle_author_1 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. |
| shingle_author_2 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. |
| shingle_author_3 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. |
| shingle_author_4 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. |
| shingle_catch_all_1 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Colas, E. Kapon, E. Simhony, S. Cox, H. M. Bhat, R. Kash, K. Lin, P. S. D. Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces |
| shingle_title_2 | Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces |
| shingle_title_3 | Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces |
| shingle_title_4 | Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:55.627Z |
| titel | Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces |
| titel_suche | Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces |
| topic | U |
| uid | nat_lic_papers_NLZ218296088 |