Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces

Colas, E. ; Kapon, E. ; Simhony, S. ; Cox, H. M. ; Bhat, R. ; Kash, K. ; Lin, P. S. D.

Woodbury, NY : American Institute of Physics (AIP)
Published 1989
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures.
Type of Medium:
Electronic Resource
URL: