Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure
Geddes, N. J. ; Sambles, J. R. ; Jarvis, D. J. ; Parker, W. G. ; Sandman, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289631208275968 |
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| autor | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. |
| autorsonst | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. |
| book_url | http://dx.doi.org/10.1063/1.103043 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218292562 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1990 |
| publikationsjahr_facette | 1990 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1990 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 56 (1990), S. 1916-1918 |
| search_space | articles |
| shingle_author_1 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. |
| shingle_author_2 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. |
| shingle_author_3 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. |
| shingle_author_4 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. |
| shingle_catch_all_1 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Geddes, N. J. Sambles, J. R. Jarvis, D. J. Parker, W. G. Sandman, D. J. Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure |
| shingle_title_2 | Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure |
| shingle_title_3 | Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure |
| shingle_title_4 | Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:54.239Z |
| titel | Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure |
| titel_suche | Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure |
| topic | U |
| uid | nat_lic_papers_NLZ218292562 |