Fabrication and investigation of asymmetric current-voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure
Geddes, N. J. ; Sambles, J. R. ; Jarvis, D. J. ; Parker, W. G. ; Sandman, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Metal/Langmuir–Blodgett monolayer/metal devices, where the monolayer consists of the dodecyloxyphenylcarbamate of 2-bromo, 5(2'-hydroxyethoxy) tetracyanoquinodimethan, a donor-σ-acceptor molecular system, have been constructed, and dc current-voltage (I-V) characteristics of these devices were recorded at room temperature. For biases of ±20 mV, the I-V characteristics are linear, changing to a nonlinear form for higher voltages. This nonlinear characteristic exhibited a ln(I)∝V1/4 dependence for both positive and negative voltages up to ±1 V. For positive voltages 〉+2.0 V for as-prepared devices and 〉+1.5 V for annealed devices, a ln(I)∝V3 dependence was observed, revealing a very large increase in current for small voltage changes. Such behavior was not observed for corresponding negative voltages, indicating rectification across a distance approximated by the length of an individual molecule.
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| Type of Medium: |
Electronic Resource
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| URL: |