High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers
Chen, T. R. ; Eng, L. E. ; Zhuang, Y. H. ; Xu, Y. J. ; Zaren, H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289630226808833 |
|---|---|
| autor | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. |
| autorsonst | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. |
| book_url | http://dx.doi.org/10.1063/1.103779 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218280556 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1990 |
| publikationsjahr_facette | 1990 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1990 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 57 (1990), S. 2762-2763 |
| search_space | articles |
| shingle_author_1 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. |
| shingle_author_2 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. |
| shingle_author_3 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. |
| shingle_author_4 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. |
| shingle_catch_all_1 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chen, T. R. Eng, L. E. Zhuang, Y. H. Xu, Y. J. Zaren, H. Yariv, A. High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers |
| shingle_title_2 | High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers |
| shingle_title_3 | High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers |
| shingle_title_4 | High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:52.093Z |
| titel | High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers |
| titel_suche | High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers |
| topic | U |
| uid | nat_lic_papers_NLZ218280556 |