High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers
Chen, T. R. ; Eng, L. E. ; Zhuang, Y. H. ; Xu, Y. J. ; Zaren, H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |