Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP
Chin, Albert ; Chang, T. Y. ; Ourmazd, A. ; Monberg, E. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289629554671616 |
|---|---|
| autor | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. |
| autorsonst | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. |
| book_url | http://dx.doi.org/10.1063/1.104458 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218268475 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 58 (1991), S. 968-970 |
| search_space | articles |
| shingle_author_1 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. |
| shingle_author_2 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. |
| shingle_author_3 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. |
| shingle_author_4 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. |
| shingle_catch_all_1 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chin, Albert Chang, T. Y. Ourmazd, A. Monberg, E. M. Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP |
| shingle_title_2 | Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP |
| shingle_title_3 | Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP |
| shingle_title_4 | Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:52.093Z |
| titel | Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP |
| titel_suche | Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP |
| topic | U |
| uid | nat_lic_papers_NLZ218268475 |