Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP
Chin, Albert ; Chang, T. Y. ; Ourmazd, A. ; Monberg, E. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111¯) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.
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| Type of Medium: |
Electronic Resource
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| URL: |