InGaAs/InP multiple quantum well tunable Bragg reflector
Blum, O. ; Zucker, J. E. ; Chiu, T. H. ; Divino, M. D. ; Jones, K. L. ; Chu, S. N. G. ; Gustafson, T. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
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Type of Medium: |
Electronic Resource
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URL: |
_version_ | 1798289627828715521 |
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autor | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. |
autorsonst | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. |
book_url | http://dx.doi.org/10.1063/1.105815 |
datenlieferant | nat_lic_papers |
hauptsatz | hsatz_simple |
identnr | NLZ218261314 |
issn | 1077-3118 |
journal_name | Applied Physics Letters |
materialart | 1 |
notes | We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method. |
package_name | American Institute of Physics (AIP) |
publikationsjahr_anzeige | 1991 |
publikationsjahr_facette | 1991 |
publikationsjahr_intervall | 8009:1990-1994 |
publikationsjahr_sort | 1991 |
publikationsort | Woodbury, NY |
publisher | American Institute of Physics (AIP) |
reference | 59 (1991), S. 2971-2973 |
search_space | articles |
shingle_author_1 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. |
shingle_author_2 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. |
shingle_author_3 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. |
shingle_author_4 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. |
shingle_catch_all_1 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. InGaAs/InP multiple quantum well tunable Bragg reflector We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_catch_all_2 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. InGaAs/InP multiple quantum well tunable Bragg reflector We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_catch_all_3 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. InGaAs/InP multiple quantum well tunable Bragg reflector We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_catch_all_4 | Blum, O. Zucker, J. E. Chiu, T. H. Divino, M. D. Jones, K. L. Chu, S. N. G. Gustafson, T. K. InGaAs/InP multiple quantum well tunable Bragg reflector We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_title_1 | InGaAs/InP multiple quantum well tunable Bragg reflector |
shingle_title_2 | InGaAs/InP multiple quantum well tunable Bragg reflector |
shingle_title_3 | InGaAs/InP multiple quantum well tunable Bragg reflector |
shingle_title_4 | InGaAs/InP multiple quantum well tunable Bragg reflector |
sigel_instance_filter | dkfz geomar wilbert ipn albert |
source_archive | AIP Digital Archive |
timestamp | 2024-05-06T08:03:51.286Z |
titel | InGaAs/InP multiple quantum well tunable Bragg reflector |
titel_suche | InGaAs/InP multiple quantum well tunable Bragg reflector |
topic | U |
uid | nat_lic_papers_NLZ218261314 |