InGaAs/InP multiple quantum well tunable Bragg reflector

Blum, O. ; Zucker, J. E. ; Chiu, T. H. ; Divino, M. D. ; Jones, K. L. ; Chu, S. N. G. ; Gustafson, T. K.

Woodbury, NY : American Institute of Physics (AIP)
Published 1991
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289627828715521
autor Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
autorsonst Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
book_url http://dx.doi.org/10.1063/1.105815
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218261314
issn 1077-3118
journal_name Applied Physics Letters
materialart 1
notes We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1991
publikationsjahr_facette 1991
publikationsjahr_intervall 8009:1990-1994
publikationsjahr_sort 1991
publikationsort Woodbury, NY
publisher American Institute of Physics (AIP)
reference 59 (1991), S. 2971-2973
search_space articles
shingle_author_1 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
shingle_author_2 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
shingle_author_3 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
shingle_author_4 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
shingle_catch_all_1 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
InGaAs/InP multiple quantum well tunable Bragg reflector
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_2 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
InGaAs/InP multiple quantum well tunable Bragg reflector
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_3 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
InGaAs/InP multiple quantum well tunable Bragg reflector
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_4 Blum, O.
Zucker, J. E.
Chiu, T. H.
Divino, M. D.
Jones, K. L.
Chu, S. N. G.
Gustafson, T. K.
InGaAs/InP multiple quantum well tunable Bragg reflector
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_title_1 InGaAs/InP multiple quantum well tunable Bragg reflector
shingle_title_2 InGaAs/InP multiple quantum well tunable Bragg reflector
shingle_title_3 InGaAs/InP multiple quantum well tunable Bragg reflector
shingle_title_4 InGaAs/InP multiple quantum well tunable Bragg reflector
sigel_instance_filter dkfz
geomar
wilbert
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source_archive AIP Digital Archive
timestamp 2024-05-06T08:03:51.286Z
titel InGaAs/InP multiple quantum well tunable Bragg reflector
titel_suche InGaAs/InP multiple quantum well tunable Bragg reflector
topic U
uid nat_lic_papers_NLZ218261314