InGaAs/InP multiple quantum well tunable Bragg reflector

Blum, O. ; Zucker, J. E. ; Chiu, T. H. ; Divino, M. D. ; Jones, K. L. ; Chu, S. N. G. ; Gustafson, T. K.

Woodbury, NY : American Institute of Physics (AIP)
Published 1991
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
Type of Medium:
Electronic Resource
URL: