Indirect-to-direct transition of stimulated emission in AlxGa1−xAs
Rinker, M. ; Kalt, H. ; Lu, Y.-C. ; Bauser, E. ; Ganser, P. ; Köhler, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289627090518016 |
|---|---|
| autor | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. |
| autorsonst | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. |
| book_url | http://dx.doi.org/10.1063/1.106357 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218256701 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 59 (1991), S. 1102-1104 |
| search_space | articles |
| shingle_author_1 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. |
| shingle_author_2 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. |
| shingle_author_3 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. |
| shingle_author_4 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. |
| shingle_catch_all_1 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. Indirect-to-direct transition of stimulated emission in AlxGa1−xAs The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. Indirect-to-direct transition of stimulated emission in AlxGa1−xAs The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. Indirect-to-direct transition of stimulated emission in AlxGa1−xAs The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Rinker, M. Kalt, H. Lu, Y.-C. Bauser, E. Ganser, P. Köhler, K. Indirect-to-direct transition of stimulated emission in AlxGa1−xAs The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Indirect-to-direct transition of stimulated emission in AlxGa1−xAs |
| shingle_title_2 | Indirect-to-direct transition of stimulated emission in AlxGa1−xAs |
| shingle_title_3 | Indirect-to-direct transition of stimulated emission in AlxGa1−xAs |
| shingle_title_4 | Indirect-to-direct transition of stimulated emission in AlxGa1−xAs |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:50.301Z |
| titel | Indirect-to-direct transition of stimulated emission in AlxGa1−xAs |
| titel_suche | Indirect-to-direct transition of stimulated emission in AlxGa1−xAs |
| topic | U |
| uid | nat_lic_papers_NLZ218256701 |