Indirect-to-direct transition of stimulated emission in AlxGa1−xAs
Rinker, M. ; Kalt, H. ; Lu, Y.-C. ; Bauser, E. ; Ganser, P. ; Köhler, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in AlxGa1−xAs heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap AlxGa1−xAs. Samples with an AlAs mole fraction (here x=0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As.
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| Type of Medium: |
Electronic Resource
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| URL: |