Activation energy for the photoluminescence W center in silicon
Schultz, Peter J. ; Thompson, T. D. ; Elliman, R. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289627005583360 |
|---|---|
| autor | Schultz, Peter J. Thompson, T. D. Elliman, R. G. |
| autorsonst | Schultz, Peter J. Thompson, T. D. Elliman, R. G. |
| book_url | http://dx.doi.org/10.1063/1.107373 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218256213 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1992 |
| publikationsjahr_facette | 1992 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1992 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 60 (1992), S. 59-61 |
| search_space | articles |
| shingle_author_1 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. |
| shingle_author_2 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. |
| shingle_author_3 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. |
| shingle_author_4 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. |
| shingle_catch_all_1 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. Activation energy for the photoluminescence W center in silicon This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. Activation energy for the photoluminescence W center in silicon This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. Activation energy for the photoluminescence W center in silicon This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Schultz, Peter J. Thompson, T. D. Elliman, R. G. Activation energy for the photoluminescence W center in silicon This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Activation energy for the photoluminescence W center in silicon |
| shingle_title_2 | Activation energy for the photoluminescence W center in silicon |
| shingle_title_3 | Activation energy for the photoluminescence W center in silicon |
| shingle_title_4 | Activation energy for the photoluminescence W center in silicon |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:50.301Z |
| titel | Activation energy for the photoluminescence W center in silicon |
| titel_suche | Activation energy for the photoluminescence W center in silicon |
| topic | U |
| uid | nat_lic_papers_NLZ218256213 |