Activation energy for the photoluminescence W center in silicon
Schultz, Peter J. ; Thompson, T. D. ; Elliman, R. G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies.
|
| Type of Medium: |
Electronic Resource
|
| URL: |