Growth and ferroelectric properties of Bi2VO5.5 thin films with metallic LaNiO3 electrodes

Prasad, K. V. R. ; Varma, K. B. R. ; Raju, A. R. ; Satyalakshmi, K. M. ; Mallya, R. M. ; Hegde, M. S.

Woodbury, NY : American Institute of Physics (AIP)
Published 1993
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Novel ferroelectric bismuth vanadate, Bi2VO5.5 (BVO), thin films have been grown between lattice matched metallic LaNiO3 (LNO) layers deposited on SrTiO3 (STO) by the pulsed laser deposition technique. LNO/BVO/LNO/STO and Au/BVO/LNO/STO trilayer structures exhibited c-oriented (001) growth of BVO. LNO has been found to be a good metallic electrode with sheet resistance ∼20 Ω in addition to aiding c-axis oriented BVO growth. The dielectric constant, εr of LNO/BVO/LNO/STO, at 300 K was about 12. However, when an Au electrode was used on top of BVO/LNO/STO film, it showed a significant improvement in the dielectric constant (εr=123). The ferroelectric properties of BVO thin films have been confirmed by hysteresis behavior with a remnant polarization, Pr=4.6×10−8 C/cm2 and coercive field, Ec=23 kV/cm at 300 K.
Type of Medium:
Electronic Resource
URL: