Growth and ferroelectric properties of Bi2VO5.5 thin films with metallic LaNiO3 electrodes
Prasad, K. V. R. ; Varma, K. B. R. ; Raju, A. R. ; Satyalakshmi, K. M. ; Mallya, R. M. ; Hegde, M. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Novel ferroelectric bismuth vanadate, Bi2VO5.5 (BVO), thin films have been grown between lattice matched metallic LaNiO3 (LNO) layers deposited on SrTiO3 (STO) by the pulsed laser deposition technique. LNO/BVO/LNO/STO and Au/BVO/LNO/STO trilayer structures exhibited c-oriented (001) growth of BVO. LNO has been found to be a good metallic electrode with sheet resistance ∼20 Ω in addition to aiding c-axis oriented BVO growth. The dielectric constant, εr of LNO/BVO/LNO/STO, at 300 K was about 12. However, when an Au electrode was used on top of BVO/LNO/STO film, it showed a significant improvement in the dielectric constant (εr=123). The ferroelectric properties of BVO thin films have been confirmed by hysteresis behavior with a remnant polarization, Pr=4.6×10−8 C/cm2 and coercive field, Ec=23 kV/cm at 300 K.
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| Type of Medium: |
Electronic Resource
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| URL: |