Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy

Katiyar, M. ; Feng, G. F. ; Yang, Y. H. ; Abelson, J. R. ; Maley, N.

Woodbury, NY : American Institute of Physics (AIP)
Published 1993
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous silicon by magnetron sputtering. For the range of deposition conditions studied (substrate temperature between 120 and 270 °C and H2 partial pressure between 0.1 and 1.0 mTorr, which result in film hydrogen content between 10 and 30 at. %), hydrogen incorporation reaches steady state for film thickness, d(approximately-greater-than)25 A(ring). Deviations from uniform growth for d〈25 A(ring) are attributed to plasma-substrate interactions due to energetic hydrogen implantation tens of angstroms beneath the growing surface and changes in the surface area during nucleation and coalescence.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289623284187137
autor Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
autorsonst Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
book_url http://dx.doi.org/10.1063/1.110024
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218214979
issn 1077-3118
journal_name Applied Physics Letters
materialart 1
notes We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous silicon by magnetron sputtering. For the range of deposition conditions studied (substrate temperature between 120 and 270 °C and H2 partial pressure between 0.1 and 1.0 mTorr, which result in film hydrogen content between 10 and 30 at. %), hydrogen incorporation reaches steady state for film thickness, d(approximately-greater-than)25 A(ring). Deviations from uniform growth for d〈25 A(ring) are attributed to plasma-substrate interactions due to energetic hydrogen implantation tens of angstroms beneath the growing surface and changes in the surface area during nucleation and coalescence.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1993
publikationsjahr_facette 1993
publikationsjahr_intervall 8009:1990-1994
publikationsjahr_sort 1993
publikationsort Woodbury, NY
publisher American Institute of Physics (AIP)
reference 63 (1993), S. 461-463
search_space articles
shingle_author_1 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
shingle_author_2 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
shingle_author_3 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
shingle_author_4 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
shingle_catch_all_1 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous silicon by magnetron sputtering. For the range of deposition conditions studied (substrate temperature between 120 and 270 °C and H2 partial pressure between 0.1 and 1.0 mTorr, which result in film hydrogen content between 10 and 30 at. %), hydrogen incorporation reaches steady state for film thickness, d(approximately-greater-than)25 A(ring). Deviations from uniform growth for d〈25 A(ring) are attributed to plasma-substrate interactions due to energetic hydrogen implantation tens of angstroms beneath the growing surface and changes in the surface area during nucleation and coalescence.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_2 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous silicon by magnetron sputtering. For the range of deposition conditions studied (substrate temperature between 120 and 270 °C and H2 partial pressure between 0.1 and 1.0 mTorr, which result in film hydrogen content between 10 and 30 at. %), hydrogen incorporation reaches steady state for film thickness, d(approximately-greater-than)25 A(ring). Deviations from uniform growth for d〈25 A(ring) are attributed to plasma-substrate interactions due to energetic hydrogen implantation tens of angstroms beneath the growing surface and changes in the surface area during nucleation and coalescence.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_3 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous silicon by magnetron sputtering. For the range of deposition conditions studied (substrate temperature between 120 and 270 °C and H2 partial pressure between 0.1 and 1.0 mTorr, which result in film hydrogen content between 10 and 30 at. %), hydrogen incorporation reaches steady state for film thickness, d(approximately-greater-than)25 A(ring). Deviations from uniform growth for d〈25 A(ring) are attributed to plasma-substrate interactions due to energetic hydrogen implantation tens of angstroms beneath the growing surface and changes in the surface area during nucleation and coalescence.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_4 Katiyar, M.
Feng, G. F.
Yang, Y. H.
Abelson, J. R.
Maley, N.
Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
We use real time, high sensitivity infrared reflectance spectroscopy to quantitatively study hydrogen incorporation during the growth of hydrogenated amorphous silicon by magnetron sputtering. For the range of deposition conditions studied (substrate temperature between 120 and 270 °C and H2 partial pressure between 0.1 and 1.0 mTorr, which result in film hydrogen content between 10 and 30 at. %), hydrogen incorporation reaches steady state for film thickness, d(approximately-greater-than)25 A(ring). Deviations from uniform growth for d〈25 A(ring) are attributed to plasma-substrate interactions due to energetic hydrogen implantation tens of angstroms beneath the growing surface and changes in the surface area during nucleation and coalescence.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_title_1 Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
shingle_title_2 Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
shingle_title_3 Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
shingle_title_4 Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
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source_archive AIP Digital Archive
timestamp 2024-05-06T08:03:46.784Z
titel Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
titel_suche Hydrogen incorporation in the early stages of hydrogenated amorphous silicon deposition evaluated by real time infrared reflectance spectroscopy
topic U
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