Quantitative analysis of low-energy Xe+ ion bombardment damage of Si(100) surfaces using x-ray photoelectron spectroscopy
Lu, Z. H. ; Mitchell, D. F. ; Graham, M. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
In situ x-ray photoelectron spectroscopy has been used to analyze the nature and extent of damage to the Si(100) surfaces bombarded with xenon ions in the energy range 0.25–2 keV. Dramatic changes in the Si 2p core levels were found upon ion bombardment. A curve-fitting analysis of the core level shows that an amorphous silicon overlayer is formed on the Xe+ ion bombarded surface. The results indicate that these low-energy Xe+ ions amorphize the surface in a layer-by-layer manner and that the depth of damage increases rapidly for ion doses between 1013 and 1015 ions cm−2. At about 1015 ions cm−2 the damage depth reaches a saturation for all ion energies studied. The saturated damage depth is found to increase linearly with ion energy.
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| Type of Medium: |
Electronic Resource
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| URL: |