A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base
Wu, Y. H. ; Su, J. S. ; Hsu, W. C. ; Liu, W. C. ; Lin, W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289619374047234 |
|---|---|
| autor | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. |
| autorsonst | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. |
| book_url | http://dx.doi.org/10.1063/1.114208 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218180586 |
| iqvoc_descriptor_title | iqvoc_00000628:bipolar transistor |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1995 |
| publikationsjahr_facette | 1995 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1995 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 66 (1995), S. 347-348 |
| search_space | articles |
| shingle_author_1 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. |
| shingle_author_2 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. |
| shingle_author_3 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. |
| shingle_author_4 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. |
| shingle_catch_all_1 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Wu, Y. H. Su, J. S. Hsu, W. C. Liu, W. C. Lin, W. A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| shingle_title_2 | A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| shingle_title_3 | A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| shingle_title_4 | A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:41.499Z |
| titel | A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| titel_suche | A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base |
| topic | U |
| uid | nat_lic_papers_NLZ218180586 |