A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base
Wu, Y. H. ; Su, J. S. ; Hsu, W. C. ; Liu, W. C. ; Lin, W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
Woodbury, NY : American Institute of Physics (AIP)
Published 1995
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |