X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices
Dura, J. A. ; Pellegrino, J. G. ; Richter, C. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
Woodbury, NY : American Institute of Physics (AIP)
Published 1996
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
To explore the role of interface scattering in high electron mobility transistor (HEMT) device performance, a series of samples consisting of both a superlattice and a HEMT structure were grown by molecular beam epitaxy (MBE) at temperatures ranging from 500 to 630 °C. Hall measurements indicate a trend toward higher mobilities in samples grown at higher temperatures. Subsequent x-ray reflectivity measurements were made, and the data were fitted by least-squares refinement of a calculated reflectivity curve determined from a model of the sample structure to obtain the composition profile along the growth direction. These results indicate smoother interfaces for the samples with higher mobilities. © 1996 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |