Wavelength dependence of carrier-type in reduced BaTiO3:Rh
Chang, J. Y. ; Chinjen, C. R. ; Duan, S. H. ; Huang, C. Y. ; Sun, C. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289610697080834 |
|---|---|
| autor | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. |
| autorsonst | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. |
| book_url | http://dx.doi.org/10.1063/1.121321 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218110677 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1998 |
| publikationsjahr_facette | 1998 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1998 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 72 (1998), S. 2199-2201 |
| search_space | articles |
| shingle_author_1 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. |
| shingle_author_2 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. |
| shingle_author_3 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. |
| shingle_author_4 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. |
| shingle_catch_all_1 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. Wavelength dependence of carrier-type in reduced BaTiO3:Rh We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. Wavelength dependence of carrier-type in reduced BaTiO3:Rh We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. Wavelength dependence of carrier-type in reduced BaTiO3:Rh We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chang, J. Y. Chinjen, C. R. Duan, S. H. Huang, C. Y. Sun, C. C. Wavelength dependence of carrier-type in reduced BaTiO3:Rh We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Wavelength dependence of carrier-type in reduced BaTiO3:Rh |
| shingle_title_2 | Wavelength dependence of carrier-type in reduced BaTiO3:Rh |
| shingle_title_3 | Wavelength dependence of carrier-type in reduced BaTiO3:Rh |
| shingle_title_4 | Wavelength dependence of carrier-type in reduced BaTiO3:Rh |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:34.921Z |
| titel | Wavelength dependence of carrier-type in reduced BaTiO3:Rh |
| titel_suche | Wavelength dependence of carrier-type in reduced BaTiO3:Rh |
| topic | U |
| uid | nat_lic_papers_NLZ218110677 |