Wavelength dependence of carrier-type in reduced BaTiO3:Rh
Chang, J. Y. ; Chinjen, C. R. ; Duan, S. H. ; Huang, C. Y. ; Sun, C. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |