Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements
Hartmann, R. ; Gennser, U. ; Sigg, H. ; Grützmacher, D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289608512897025 |
|---|---|
| autor | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. |
| autorsonst | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. |
| book_url | http://dx.doi.org/10.1063/1.122144 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218091427 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1998 |
| publikationsjahr_facette | 1998 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1998 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 73 (1998), S. 1257-1259 |
| search_space | articles |
| shingle_author_1 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. |
| shingle_author_2 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. |
| shingle_author_3 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. |
| shingle_author_4 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. |
| shingle_catch_all_1 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Hartmann, R. Gennser, U. Sigg, H. Grützmacher, D. Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements |
| shingle_title_2 | Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements |
| shingle_title_3 | Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements |
| shingle_title_4 | Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:30.427Z |
| titel | Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements |
| titel_suche | Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements |
| topic | U |
| uid | nat_lic_papers_NLZ218091427 |