Band gap and band alignment of strain reduced Si/Si1−x−yGexCy multiple quantum well structures obtained by photoluminescence measurements
Hartmann, R. ; Gennser, U. ; Sigg, H. ; Grützmacher, D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
Woodbury, NY : American Institute of Physics (AIP)
Published 1998
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |