Observation of change in shape of oxygen precipitates in high-temperature annealed silicon by transmission electron microscopy
Sakai, K. ; Yamagami, T. ; Ojima, K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
Woodbury, NY : American Institute of Physics (AIP)
Published 1999
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Changes in size and shape of oxygen precipitates in Czochralski silicon after high-temperature annealing in an Ar atmosphere were observed using a transmission electron microscopy. The oxide precipitates introduced by 750 °C after 4 h annealing in an Ar atmosphere had their corners rounded off by thermal annealing at 1200 °C, and disappeared by 1300 °C although we observed no change in shape at 1050 °C. © 1999 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |