Microstructure and dielectric properties of Ba1−xSrxTiO3 films grown on LaAlO3 substrates
Gim, Y. ; Hudson, T. ; Fan, Y. ; Kwon, C. ; Findikoglu, A. T. ; Gibbons, B. J. ; Park, B. H. ; Jia, Q. X.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
Woodbury, NY : American Institute of Physics (AIP)
Published 2000
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report a systematic study of the microstructure and dielectric properties of barium strontium titanate, Ba1−xSrxTiO3, films grown by laser ablation on LaAlO3 substrates, where x=0.1–0.9 at an interval of 0.1. X-ray diffraction analysis shows that when x〈0.4, the longest unit-cell axis is parallel to the plane of the substrate but perpendicular as x approaches 1. Dielectric constant versus temperature measurements show that the relative dielectric constant has a maximum value and that the peak temperatures corresponding to the maximum relative dielectric constant are about 70 °C higher when x≤0.4 but similar when x〉0.4, compared with the peak temperatures of the bulk Ba1−xSrxTiO3. At room temperature, the dielectric constant and tunability are relatively high when x≤0.4 but start to decrease rapidly as x increases. © 2000 American Institute of Physics.
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| Type of Medium: |
Electronic Resource
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| URL: |