Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices
Larsson, T. ; Wennstrom, U. ; Norstrom, H. ; Blom, H.-O. ; Berg, S. ; Engstrom, I.
Amsterdam : Elsevier
Amsterdam : Elsevier
| ISSN: |
0038-1101
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|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Electrical Engineering, Measurement and Control Technology
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291281210769408 |
|---|---|
| autor | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. |
| autorsonst | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0038-1101(89)90128-7 |
| datenlieferant | nat_lic_papers |
| fussnote | The metallization system Ti/TiB"2/Al to silicon has been investigated. TiB"2 was reactively sputter deposited in an Ar/B"2H"6 mixture. With this technique it is possible to study the stability of both Ti/TiB"2 and TiB"2 contacts to both n- and p-type silicon. In general Ti/TiB"2 contacts showed significantly smaller contact resistances than TiB"2 contacts. Upon annealing we found that current crowding at the periphery became predominant. This current crowding effect was more pronounced on n-type silicon. Diode structures of Ti/TiB"2/Al annealed up to 500^oC exhibited no junction leakage. The TiB"2/Al contact remained intact up to 525^oC.Barrier height measurements on Schottky contacts annealed at different temperatures was also performed. The barrier height value of 0.6 eV, close to that reported for TiSi"2, was recorded after annealing at 525^oC.The usefulness of these contact structures in microelectronic metallization was discussed. The difference between the two metallization systems was also investigated by Rutherford Backscattering Spectroscopy and X-Ray Diffraction measurements. |
| hauptsatz | hsatz_simple |
| identnr | NLZ179533541 |
| issn | 0038-1101 |
| journal_name | Solid State Electronics |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 32 (1989), S. 385-389 |
| search_space | articles |
| shingle_author_1 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. |
| shingle_author_2 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. |
| shingle_author_3 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. |
| shingle_author_4 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. |
| shingle_catch_all_1 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices 0038-1101 00381101 Elsevier |
| shingle_catch_all_2 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices 0038-1101 00381101 Elsevier |
| shingle_catch_all_3 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices 0038-1101 00381101 Elsevier |
| shingle_catch_all_4 | Larsson, T. Wennstrom, U. Norstrom, H. Blom, H.-O. Berg, S. Engstrom, I. Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices 0038-1101 00381101 Elsevier |
| shingle_title_1 | Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices |
| shingle_title_2 | Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices |
| shingle_title_3 | Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices |
| shingle_title_4 | Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:30:08.275Z |
| titel | Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices |
| titel_suche | Si/Ti/TiB"2/Al structures investigated as contacts in microelectronic devices The metallization system Ti/TiB"2/Al to silicon has been investigated. TiB"2 was reactively sputter deposited in an Ar/B"2H"6 mixture. With this technique it is possible to study the stability of both Ti/TiB"2 and TiB"2 contacts to both n- and p-type silicon. In general Ti/TiB"2 contacts showed significantly smaller contact resistances than TiB"2 contacts. Upon annealing we found that current crowding at the periphery became predominant. This current crowding effect was more pronounced on n-type silicon. Diode structures of Ti/TiB"2/Al annealed up to 500^oC exhibited no junction leakage. The TiB"2/Al contact remained intact up to 525^oC.Barrier height measurements on Schottky contacts annealed at different temperatures was also performed. The barrier height value of 0.6 eV, close to that reported for TiSi"2, was recorded after annealing at 525^oC.The usefulness of these contact structures in microelectronic metallization was discussed. The difference between the two metallization systems was also investigated by Rutherford Backscattering Spectroscopy and X-Ray Diffraction measurements. |
| topic | ZN U |
| uid | nat_lic_papers_NLZ179533541 |