Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors
| ISSN: |
0038-1101
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|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Electrical Engineering, Measurement and Control Technology
Physics
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| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291278844133379 |
|---|---|
| autor | Luo, F. Neudeck, G.W. Luan, S. |
| autorsonst | Luo, F. Neudeck, G.W. Luan, S. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0038-1101(91)90070-F |
| datenlieferant | nat_lic_papers |
| fussnote | The turn-on transient behavior of amorphous-silicon (a-Si:H) thin-film transistors (TFT) was measured. The source current decay, after the initial step, had a double exponential decay within the first 6 ms. The source-current decay rate did not depend on the drain voltage, gate voltage or geometry of the device. In this study a modeling methodology based on a table look-up procedure was used to simulate the turn-on transient behavior of the a-Si:H TFT. Based on experimental evidence, the original five look-up tables were simplified to two tables. The simplified set of two tables was used to simulate the long-term transient behavior and yielded good agreement with the experimental results. |
| hauptsatz | hsatz_simple |
| identnr | NLZ179507974 |
| iqvoc_descriptor_title | iqvoc_00000786:Simulation iqvoc_00000627:transistors |
| issn | 0038-1101 |
| journal_name | Solid State Electronics |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 34 (1991), S. 1289-1295 |
| search_space | articles |
| shingle_author_1 | Luo, F. Neudeck, G.W. Luan, S. |
| shingle_author_2 | Luo, F. Neudeck, G.W. Luan, S. |
| shingle_author_3 | Luo, F. Neudeck, G.W. Luan, S. |
| shingle_author_4 | Luo, F. Neudeck, G.W. Luan, S. |
| shingle_catch_all_1 | Luo, F. Neudeck, G.W. Luan, S. Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors 0038-1101 00381101 Elsevier |
| shingle_catch_all_2 | Luo, F. Neudeck, G.W. Luan, S. Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors 0038-1101 00381101 Elsevier |
| shingle_catch_all_3 | Luo, F. Neudeck, G.W. Luan, S. Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors 0038-1101 00381101 Elsevier |
| shingle_catch_all_4 | Luo, F. Neudeck, G.W. Luan, S. Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors 0038-1101 00381101 Elsevier |
| shingle_title_1 | Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors |
| shingle_title_2 | Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors |
| shingle_title_3 | Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors |
| shingle_title_4 | Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:30:05.773Z |
| titel | Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors |
| titel_suche | Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors The turn-on transient behavior of amorphous-silicon (a-Si:H) thin-film transistors (TFT) was measured. The source current decay, after the initial step, had a double exponential decay within the first 6 ms. The source-current decay rate did not depend on the drain voltage, gate voltage or geometry of the device. In this study a modeling methodology based on a table look-up procedure was used to simulate the turn-on transient behavior of the a-Si:H TFT. Based on experimental evidence, the original five look-up tables were simplified to two tables. The simplified set of two tables was used to simulate the long-term transient behavior and yielded good agreement with the experimental results. |
| topic | ZN U |
| uid | nat_lic_papers_NLZ179507974 |