Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors - Luo, F.; Neudeck, G.W.; Luan, S. (Elsevier)
The turn-on transient behavior of amorphous-silicon (a-Si:H) thin-film transistors (TFT) was measured. The source current decay, after the initial step, had a double exponential decay within the first 6 ms. The source-current decay rate did not depend on the drain voltage, gate voltage or geometry of the device. In this study a modeling methodology based on a table look-up procedure was used to simulate the turn-on transient behavior of the a-Si:H TFT. Based on experimental evidence, the original five look-up tables were simplified to two tables. The simplified set of two tables was used to simulate the long-term transient behavior and yielded good agreement with the experimental results.
http://linkinghub.elsevier.com/retrieve/pii/0038-1101(91)90070-F
Keywords: ZN; U