Ion treatment of silicon in a glow discharge
| ISSN: |
0040-6090
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291428544086016 |
|---|---|
| autor | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. |
| autorsonst | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0040-6090(75)90301-6 |
| datenlieferant | nat_lic_papers |
| fussnote | The N, Ni, Al, C ion treatment of a silicon single crystal under the conditions of a d.c. glow discharge has been studied. It has been found that in such circumstances doping and surface thin film formation may occur. The explanation put forward is based on the assumption of a very low energy ion implantation. |
| hauptsatz | hsatz_simple |
| identnr | NLZ179102885 |
| issn | 0040-6090 |
| journal_name | Thin Solid Films |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 30 (1975), S. 29-35 |
| search_space | articles |
| shingle_author_1 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. |
| shingle_author_2 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. |
| shingle_author_3 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. |
| shingle_author_4 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. |
| shingle_catch_all_1 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. Ion treatment of silicon in a glow discharge 0040-6090 00406090 Elsevier |
| shingle_catch_all_2 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. Ion treatment of silicon in a glow discharge 0040-6090 00406090 Elsevier |
| shingle_catch_all_3 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. Ion treatment of silicon in a glow discharge 0040-6090 00406090 Elsevier |
| shingle_catch_all_4 | Sokolowski, M. Sokolowska, A. Rolinski, E. Michalski, A. Ion treatment of silicon in a glow discharge 0040-6090 00406090 Elsevier |
| shingle_title_1 | Ion treatment of silicon in a glow discharge |
| shingle_title_2 | Ion treatment of silicon in a glow discharge |
| shingle_title_3 | Ion treatment of silicon in a glow discharge |
| shingle_title_4 | Ion treatment of silicon in a glow discharge |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:32:28.631Z |
| titel | Ion treatment of silicon in a glow discharge |
| titel_suche | Ion treatment of silicon in a glow discharge The N, Ni, Al, C ion treatment of a silicon single crystal under the conditions of a d.c. glow discharge has been studied. It has been found that in such circumstances doping and surface thin film formation may occur. The explanation put forward is based on the assumption of a very low energy ion implantation. |
| topic | U |
| uid | nat_lic_papers_NLZ179102885 |