The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE
| ISSN: |
0167-9317
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Electrical Engineering, Measurement and Control Technology
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291659614584834 |
|---|---|
| autor | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. |
| autorsonst | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0167-9317(91)90060-Q |
| datenlieferant | nat_lic_papers |
| fussnote | Silylation and dry development are the key processes of DESIRE technique. In the present work, the silylation of resist has been investigated as a function of prebake temperature and TMSDEA concentration. The effect of neutral scatterer, He, on anisotropy of resist profile in dry development has been studied by using optical emission spectroscopy. The dependences of anisotropy and etch rate on RF power and pressure are also described. |
| hauptsatz | hsatz_simple |
| identnr | NLZ177511389 |
| issn | 0167-9317 |
| journal_name | Microelectronic Engineering |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 13 (1991), S. 115-118 |
| search_space | articles |
| shingle_author_1 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. |
| shingle_author_2 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. |
| shingle_author_3 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. |
| shingle_author_4 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. |
| shingle_catch_all_1 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE 0167-9317 01679317 Elsevier |
| shingle_catch_all_2 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE 0167-9317 01679317 Elsevier |
| shingle_catch_all_3 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE 0167-9317 01679317 Elsevier |
| shingle_catch_all_4 | Yun, S.J. Kwon, K.-H. Park, B.-S. Jeon, Y.-J. Kang, S.-W. The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE 0167-9317 01679317 Elsevier |
| shingle_title_1 | The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE |
| shingle_title_2 | The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE |
| shingle_title_3 | The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE |
| shingle_title_4 | The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:36:07.813Z |
| titel | The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE |
| titel_suche | The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE Silylation and dry development are the key processes of DESIRE technique. In the present work, the silylation of resist has been investigated as a function of prebake temperature and TMSDEA concentration. The effect of neutral scatterer, He, on anisotropy of resist profile in dry development has been studied by using optical emission spectroscopy. The dependences of anisotropy and etch rate on RF power and pressure are also described. |
| topic | ZN |
| uid | nat_lic_papers_NLZ177511389 |