High aspect ratio silicon trench fabrication by inductively coupled plasma
| ISSN: |
1432-1858
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Electrical Engineering, Measurement and Control Technology
Technology
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| Notes: |
Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798295785073278978 |
|---|---|
| autor | Chung, C. K. Lu, H. C. Jaw, T. H. |
| autorsonst | Chung, C. K. Lu, H. C. Jaw, T. H. |
| book_url | http://dx.doi.org/10.1007/s005420050008 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLM206079613 |
| issn | 1432-1858 |
| journal_name | Microsystem technologies |
| materialart | 1 |
| notes | Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min. |
| package_name | Springer |
| publikationsjahr_anzeige | 2000 |
| publikationsjahr_facette | 2000 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2000 |
| publisher | Springer |
| reference | 6 (2000), S. 106-108 |
| search_space | articles |
| shingle_author_1 | Chung, C. K. Lu, H. C. Jaw, T. H. |
| shingle_author_2 | Chung, C. K. Lu, H. C. Jaw, T. H. |
| shingle_author_3 | Chung, C. K. Lu, H. C. Jaw, T. H. |
| shingle_author_4 | Chung, C. K. Lu, H. C. Jaw, T. H. |
| shingle_catch_all_1 | Chung, C. K. Lu, H. C. Jaw, T. H. High aspect ratio silicon trench fabrication by inductively coupled plasma Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min. 1432-1858 14321858 Springer |
| shingle_catch_all_2 | Chung, C. K. Lu, H. C. Jaw, T. H. High aspect ratio silicon trench fabrication by inductively coupled plasma Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min. 1432-1858 14321858 Springer |
| shingle_catch_all_3 | Chung, C. K. Lu, H. C. Jaw, T. H. High aspect ratio silicon trench fabrication by inductively coupled plasma Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min. 1432-1858 14321858 Springer |
| shingle_catch_all_4 | Chung, C. K. Lu, H. C. Jaw, T. H. High aspect ratio silicon trench fabrication by inductively coupled plasma Abstract Very high aspect ratio silicon trench with nearly vertical sidewall profile had been demonstrated by inductively coupled plasma (ICP) etching. This silicon trench with aspect ratio more than 30 and vertical sidewall were basically fabricated by STS ASETM technology and controlled at proper process parameters. We controlled the appropriate platen power and reaction gas to solve the problem of more positive profile at high aspect ratio trench and avoid the bowing formation on the sidewall simultaneously. Different feature sizes for silicon trench were designed to study the aspect ratio dependent etching properties. The 2.2 μm wide trench etched had aspect ratio of 33 and etching rate of 1.8 μm/min while the 5.0 μm wide trench had aspect ratio of 20 and etching rate of 2.5 μm/min. 1432-1858 14321858 Springer |
| shingle_title_1 | High aspect ratio silicon trench fabrication by inductively coupled plasma |
| shingle_title_2 | High aspect ratio silicon trench fabrication by inductively coupled plasma |
| shingle_title_3 | High aspect ratio silicon trench fabrication by inductively coupled plasma |
| shingle_title_4 | High aspect ratio silicon trench fabrication by inductively coupled plasma |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Springer Online Journal Archives 1860-2000 |
| timestamp | 2024-05-06T09:41:42.899Z |
| titel | High aspect ratio silicon trench fabrication by inductively coupled plasma |
| titel_suche | High aspect ratio silicon trench fabrication by inductively coupled plasma |
| topic | ZN ZG |
| uid | nat_lic_papers_NLM206079613 |