Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface
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1432-0630
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| Keywords: |
PACS: 73.20. ; r; 81.40.Rs; 81.60.Cp
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Physics
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| Notes: |
Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798295434897129472 |
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| autor | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. |
| autorsonst | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. |
| book_url | http://dx.doi.org/10.1007/BF01594239 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLM203255240 |
| issn | 1432-0630 |
| journal_name | Applied physics |
| materialart | 1 |
| notes | Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique. |
| package_name | Springer |
| publikationsjahr_anzeige | 1996 |
| publikationsjahr_facette | 1996 |
| publikationsjahr_intervall | 8004:1995-1999 |
| publikationsjahr_sort | 1996 |
| publisher | Springer |
| reference | 62 (1996), S. 391-395 |
| schlagwort | PACS: 73.20. r; 81.40.Rs; 81.60.Cp |
| search_space | articles |
| shingle_author_1 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. |
| shingle_author_2 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. |
| shingle_author_3 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. |
| shingle_author_4 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. |
| shingle_catch_all_1 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface PACS: 73.20. r; 81.40.Rs; 81.60.Cp PACS: 73.20. r; 81.40.Rs; 81.60.Cp Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique. 1432-0630 14320630 Springer |
| shingle_catch_all_2 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface PACS: 73.20. r; 81.40.Rs; 81.60.Cp PACS: 73.20. r; 81.40.Rs; 81.60.Cp Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique. 1432-0630 14320630 Springer |
| shingle_catch_all_3 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface PACS: 73.20. r; 81.40.Rs; 81.60.Cp PACS: 73.20. r; 81.40.Rs; 81.60.Cp Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique. 1432-0630 14320630 Springer |
| shingle_catch_all_4 | Liang, Z. X. Han, Z. S. Lou, J. S. Wang, L. C. Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface PACS: 73.20. r; 81.40.Rs; 81.60.Cp PACS: 73.20. r; 81.40.Rs; 81.60.Cp Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique. 1432-0630 14320630 Springer |
| shingle_title_1 | Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface |
| shingle_title_2 | Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface |
| shingle_title_3 | Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface |
| shingle_title_4 | Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Springer Online Journal Archives 1860-2000 |
| timestamp | 2024-05-06T09:36:09.391Z |
| titel | Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface |
| titel_suche | Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface |
| topic | ZL U |
| uid | nat_lic_papers_NLM203255240 |