Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface
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1432-0630
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PACS: 73.20. ; r; 81.40.Rs; 81.60.Cp
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Physics
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| Notes: |
Abstract. The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400 °C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2×1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique.
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| Type of Medium: |
Electronic Resource
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