The properties of InGaAsP/InP heterolasers with step-divergent waveguides
Golikova, E. G. ; Kureshov, V. A. ; Leshko, A. Yu. ; Livshits, D. A. ; Lyutetskii, A. V. ; Nikolaev, D. N. ; Pikhtin, N. A. ; Ryaboshtan, Yu. A. ; Slipchenko, S. O. ; Tarasov, I. S. ; Fetisova, N. V.
Springer
Published 2000
Springer
Published 2000
| ISSN: |
1090-6533
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798295293500850176 |
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| autor | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. |
| autorsonst | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. |
| book_url | http://dx.doi.org/10.1134/1.1321237 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLM198815395 |
| issn | 1090-6533 |
| journal_name | Technical physics letters |
| materialart | 1 |
| notes | Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides. |
| package_name | Springer |
| publikationsjahr_anzeige | 2000 |
| publikationsjahr_facette | 2000 |
| publikationsjahr_intervall | 7999:2000-2004 |
| publikationsjahr_sort | 2000 |
| publisher | Springer |
| reference | 26 (2000), S. 913-915 |
| search_space | articles |
| shingle_author_1 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. |
| shingle_author_2 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. |
| shingle_author_3 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. |
| shingle_author_4 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. |
| shingle_catch_all_1 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. The properties of InGaAsP/InP heterolasers with step-divergent waveguides Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides. 1090-6533 10906533 Springer |
| shingle_catch_all_2 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. The properties of InGaAsP/InP heterolasers with step-divergent waveguides Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides. 1090-6533 10906533 Springer |
| shingle_catch_all_3 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. The properties of InGaAsP/InP heterolasers with step-divergent waveguides Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides. 1090-6533 10906533 Springer |
| shingle_catch_all_4 | Golikova, E. G. Kureshov, V. A. Leshko, A. Yu. Livshits, D. A. Lyutetskii, A. V. Nikolaev, D. N. Pikhtin, N. A. Ryaboshtan, Yu. A. Slipchenko, S. O. Tarasov, I. S. Fetisova, N. V. The properties of InGaAsP/InP heterolasers with step-divergent waveguides Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides. 1090-6533 10906533 Springer |
| shingle_title_1 | The properties of InGaAsP/InP heterolasers with step-divergent waveguides |
| shingle_title_2 | The properties of InGaAsP/InP heterolasers with step-divergent waveguides |
| shingle_title_3 | The properties of InGaAsP/InP heterolasers with step-divergent waveguides |
| shingle_title_4 | The properties of InGaAsP/InP heterolasers with step-divergent waveguides |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Springer Online Journal Archives 1860-2000 |
| timestamp | 2024-05-06T09:33:54.715Z |
| titel | The properties of InGaAsP/InP heterolasers with step-divergent waveguides |
| titel_suche | The properties of InGaAsP/InP heterolasers with step-divergent waveguides |
| topic | U |
| uid | nat_lic_papers_NLM198815395 |