The properties of InGaAsP/InP heterolasers with step-divergent waveguides
Golikova, E. G. ; Kureshov, V. A. ; Leshko, A. Yu. ; Livshits, D. A. ; Lyutetskii, A. V. ; Nikolaev, D. N. ; Pikhtin, N. A. ; Ryaboshtan, Yu. A. ; Slipchenko, S. O. ; Tarasov, I. S. ; Fetisova, N. V.
Springer
Published 2000
Springer
Published 2000
| ISSN: |
1090-6533
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 μm provide for an intrinsic quantum yield of ηi=85%. An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm−1, which is comparable with the level of losses in similar structures with uniform divergent waveguides.
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| Type of Medium: |
Electronic Resource
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| URL: |