Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors

Samoilov, N. A. ; Frolov, A. N. ; Shutov, S. V.
Springer
Published 1998
ISSN:
1090-6525
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
Type of Medium:
Electronic Resource
URL:
_version_ 1798297607670333441
autor Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
autorsonst Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
book_url http://dx.doi.org/10.1134/1.1259179
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLM198794266
iqvoc_descriptor_title iqvoc_00000627:transistors
issn 1090-6525
journal_name Technical physics
materialart 1
notes Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
package_name Springer
publikationsjahr_anzeige 1998
publikationsjahr_facette 1998
publikationsjahr_intervall 8004:1995-1999
publikationsjahr_sort 1998
publisher Springer
reference 43 (1998), S. 1262-1263
search_space articles
shingle_author_1 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
shingle_author_2 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
shingle_author_3 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
shingle_author_4 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
shingle_catch_all_1 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
1090-6525
10906525
Springer
shingle_catch_all_2 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
1090-6525
10906525
Springer
shingle_catch_all_3 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
1090-6525
10906525
Springer
shingle_catch_all_4 Samoilov, N. A.
Frolov, A. N.
Shutov, S. V.
Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
1090-6525
10906525
Springer
shingle_title_1 Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
shingle_title_2 Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
shingle_title_3 Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
shingle_title_4 Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
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source_archive Springer Online Journal Archives 1860-2000
timestamp 2024-05-06T10:10:40.784Z
titel Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
titel_suche Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
topic U
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