Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
ISSN: |
1090-6525
|
---|---|
Source: |
Springer Online Journal Archives 1860-2000
|
Topics: |
Physics
|
Notes: |
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
|
Type of Medium: |
Electronic Resource
|
URL: |
_version_ | 1798297607670333441 |
---|---|
autor | Samoilov, N. A. Frolov, A. N. Shutov, S. V. |
autorsonst | Samoilov, N. A. Frolov, A. N. Shutov, S. V. |
book_url | http://dx.doi.org/10.1134/1.1259179 |
datenlieferant | nat_lic_papers |
hauptsatz | hsatz_simple |
identnr | NLM198794266 |
iqvoc_descriptor_title | iqvoc_00000627:transistors |
issn | 1090-6525 |
journal_name | Technical physics |
materialart | 1 |
notes | Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors. |
package_name | Springer |
publikationsjahr_anzeige | 1998 |
publikationsjahr_facette | 1998 |
publikationsjahr_intervall | 8004:1995-1999 |
publikationsjahr_sort | 1998 |
publisher | Springer |
reference | 43 (1998), S. 1262-1263 |
search_space | articles |
shingle_author_1 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. |
shingle_author_2 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. |
shingle_author_3 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. |
shingle_author_4 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. |
shingle_catch_all_1 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors. 1090-6525 10906525 Springer |
shingle_catch_all_2 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors. 1090-6525 10906525 Springer |
shingle_catch_all_3 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors. 1090-6525 10906525 Springer |
shingle_catch_all_4 | Samoilov, N. A. Frolov, A. N. Shutov, S. V. Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors. 1090-6525 10906525 Springer |
shingle_title_1 | Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors |
shingle_title_2 | Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors |
shingle_title_3 | Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors |
shingle_title_4 | Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors |
sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
source_archive | Springer Online Journal Archives 1860-2000 |
timestamp | 2024-05-06T10:10:40.784Z |
titel | Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors |
titel_suche | Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors |
topic | U |
uid | nat_lic_papers_NLM198794266 |