Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors
| ISSN: |
1090-6525
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.
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| Type of Medium: |
Electronic Resource
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| URL: |