Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR

ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02068965
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autor Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
autorsonst Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
book_url http://dx.doi.org/10.1007/BF02068965
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLM194379515
issn 1572-9540
journal_name Hyperfine interactions
materialart 1
notes Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
package_name Springer
publikationsjahr_anzeige 1994
publikationsjahr_facette 1994
publikationsjahr_intervall 8009:1990-1994
publikationsjahr_sort 1994
publisher Springer
reference 86 (1994), S. 693-698
search_space articles
shingle_author_1 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
shingle_author_2 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
shingle_author_3 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
shingle_author_4 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
shingle_catch_all_1 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
1572-9540
15729540
Springer
shingle_catch_all_2 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
1572-9540
15729540
Springer
shingle_catch_all_3 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
1572-9540
15729540
Springer
shingle_catch_all_4 Chow, K. H.
Kiefl, R. F.
Schneider, J. W.
Estle, T. L.
Hitti, B.
Lichti, R. L.
Schwab, C.
Kreitzman, S. R.
DuVarney, R. C.
Senba, M.
Sonier, J.
Johnston, T. M. S.
MacFarlane, W. A.
Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
1572-9540
15729540
Springer
shingle_title_1 Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
shingle_title_2 Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
shingle_title_3 Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
shingle_title_4 Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
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wilbert
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source_archive Springer Online Journal Archives 1860-2000
timestamp 2024-05-06T10:07:55.404Z
titel Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
titel_suche Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
topic U
uid nat_lic_papers_NLM194379515