Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR
Chow, K. H. ; Kiefl, R. F. ; Schneider, J. W. ; Estle, T. L. ; Hitti, B. ; Lichti, R. L. ; Schwab, C. ; Kreitzman, S. R. ; DuVarney, R. C. ; Senba, M. ; Sonier, J. ; Johnston, T. M. S. ; MacFarlane, W. A.
Springer
Published 1994
Springer
Published 1994
| ISSN: |
1572-9540
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract We report longitudinal fieldμSR 1/T 1 measurements in Si from room temperature to 850 K. The data in pure Si and Si∶B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si∶P (n-type) at high temperatures, the data in the region between 300–450 K indicates that at least one other state is involved in the dynamics.
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| Type of Medium: |
Electronic Resource
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| URL: |