μSR studies in heavily doped GaAs
Chow, K. H. ; Kiefl, R. F. ; Schneider, J. W. ; Estle, T. L. ; Hitti, B. ; Johnston, T. M. S. ; Lichti, R. L. ; MacFarlane, W. A.
Springer
Published 1994
Springer
Published 1994
| ISSN: |
1572-9540
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798297433662291970 |
|---|---|
| autor | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. |
| autorsonst | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. |
| book_url | http://dx.doi.org/10.1007/BF02068959 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLM194379450 |
| issn | 1572-9540 |
| journal_name | Hyperfine interactions |
| materialart | 1 |
| notes | Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results. |
| package_name | Springer |
| publikationsjahr_anzeige | 1994 |
| publikationsjahr_facette | 1994 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1994 |
| publisher | Springer |
| reference | 86 (1994), S. 645-651 |
| search_space | articles |
| shingle_author_1 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. |
| shingle_author_2 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. |
| shingle_author_3 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. |
| shingle_author_4 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. |
| shingle_catch_all_1 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. μSR studies in heavily doped GaAs Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results. 1572-9540 15729540 Springer |
| shingle_catch_all_2 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. μSR studies in heavily doped GaAs Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results. 1572-9540 15729540 Springer |
| shingle_catch_all_3 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. μSR studies in heavily doped GaAs Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results. 1572-9540 15729540 Springer |
| shingle_catch_all_4 | Chow, K. H. Kiefl, R. F. Schneider, J. W. Estle, T. L. Hitti, B. Johnston, T. M. S. Lichti, R. L. MacFarlane, W. A. μSR studies in heavily doped GaAs Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results. 1572-9540 15729540 Springer |
| shingle_title_1 | μSR studies in heavily doped GaAs |
| shingle_title_2 | μSR studies in heavily doped GaAs |
| shingle_title_3 | μSR studies in heavily doped GaAs |
| shingle_title_4 | μSR studies in heavily doped GaAs |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Springer Online Journal Archives 1860-2000 |
| timestamp | 2024-05-06T10:07:55.404Z |
| titel | μSR studies in heavily doped GaAs |
| titel_suche | μSR studies in heavily doped GaAs |
| topic | U |
| uid | nat_lic_papers_NLM194379450 |