μSR studies in heavily doped GaAs
Chow, K. H. ; Kiefl, R. F. ; Schneider, J. W. ; Estle, T. L. ; Hitti, B. ; Johnston, T. M. S. ; Lichti, R. L. ; MacFarlane, W. A.
Springer
Published 1994
Springer
Published 1994
| ISSN: |
1572-9540
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract Transverse-field (TF) and longitudinal-field (LF)μ + SR measurements have been made on conducting GaAs∶Si (n-type ≈ 1018 cm−3) and GaAs∶Zn (p-type ≈ 1019 cm−3) from 20 mK to 200 K. At low temperatures in GaAs∶Si, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAs∶Zn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results.
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| Type of Medium: |
Electronic Resource
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| URL: |