Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers

Publication Date:
2018-11-06
Publisher:
American Physical Society (APS)
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Keywords:
Semiconductors I: bulk
Published by:
_version_ 1836399081334767616
autor C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
beschreibung Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018
citation_standardnr 6353515
datenlieferant ipn_articles
feed_id 52538
feed_publisher American Physical Society (APS)
feed_publisher_url http://www.aps.org/
insertion_date 2018-11-06
journaleissn 1095-3795
journalissn 1098-0121
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher American Physical Society (APS)
quelle Physical Review B
relation http://link.aps.org/doi/10.1103/PhysRevB.98.195201
schlagwort Semiconductors I: bulk
search_space articles
shingle_author_1 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
shingle_author_2 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
shingle_author_3 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
shingle_author_4 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
shingle_catch_all_1 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
Semiconductors I: bulk
Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018
C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_2 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
Semiconductors I: bulk
Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018
C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_3 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
Semiconductors I: bulk
Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018
C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_4 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
Semiconductors I: bulk
Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018
C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_title_1 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
shingle_title_2 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
shingle_title_3 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
shingle_title_4 Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
timestamp 2025-06-30T23:37:17.660Z
titel Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
titel_suche Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
topic U
uid ipn_articles_6353515