Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers
C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
American Physical Society (APS)
Published 2018
American Physical Society (APS)
Published 2018
| Publication Date: |
2018-11-06
|
|---|---|
| Publisher: |
American Physical Society (APS)
|
| Print ISSN: |
1098-0121
|
| Electronic ISSN: |
1095-3795
|
| Topics: |
Physics
|
| Keywords: |
Semiconductors I: bulk
|
| Published by: |
| _version_ | 1836399081334767616 |
|---|---|
| autor | C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt |
| beschreibung | Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018 |
| citation_standardnr | 6353515 |
| datenlieferant | ipn_articles |
| feed_id | 52538 |
| feed_publisher | American Physical Society (APS) |
| feed_publisher_url | http://www.aps.org/ |
| insertion_date | 2018-11-06 |
| journaleissn | 1095-3795 |
| journalissn | 1098-0121 |
| publikationsjahr_anzeige | 2018 |
| publikationsjahr_facette | 2018 |
| publikationsjahr_intervall | 7984:2015-2019 |
| publikationsjahr_sort | 2018 |
| publisher | American Physical Society (APS) |
| quelle | Physical Review B |
| relation | http://link.aps.org/doi/10.1103/PhysRevB.98.195201 |
| schlagwort | Semiconductors I: bulk |
| search_space | articles |
| shingle_author_1 | C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt |
| shingle_author_2 | C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt |
| shingle_author_3 | C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt |
| shingle_author_4 | C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt |
| shingle_catch_all_1 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers Semiconductors I: bulk Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_catch_all_2 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers Semiconductors I: bulk Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_catch_all_3 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers Semiconductors I: bulk Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_catch_all_4 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers Semiconductors I: bulk Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018 C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_title_1 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers |
| shingle_title_2 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers |
| shingle_title_3 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers |
| shingle_title_4 | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers |
| timestamp | 2025-06-30T23:37:17.660Z |
| titel | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers |
| titel_suche | Highly enriched $^{28}\mathrm{Si}$ reveals remarkable optical linewidths and fine structure for well-known damage centers |
| topic | U |
| uid | ipn_articles_6353515 |