Study of silicon photomultiplier performance in external electric fields

X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
Institute of Physics Publishing (IOP)
Published 2018
Publication Date:
2018-09-18
Publisher:
Institute of Physics Publishing (IOP)
Electronic ISSN:
1748-0221
Topics:
Physics
Published by:
_version_ 1836399051009949696
autor X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
beschreibung We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
citation_standardnr 6333415
datenlieferant ipn_articles
feed_id 66992
feed_publisher Institute of Physics Publishing (IOP)
feed_publisher_url http://www.iop.org/
insertion_date 2018-09-18
journaleissn 1748-0221
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher Institute of Physics Publishing (IOP)
quelle Journal of Instrumentation
relation http://iopscience.iop.org/1748-0221/13/09/T09006
search_space articles
shingle_author_1 X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
shingle_author_2 X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
shingle_author_3 X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
shingle_author_4 X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
shingle_catch_all_1 Study of silicon photomultiplier performance in external electric fields
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
Institute of Physics Publishing (IOP)
1748-0221
17480221
shingle_catch_all_2 Study of silicon photomultiplier performance in external electric fields
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
Institute of Physics Publishing (IOP)
1748-0221
17480221
shingle_catch_all_3 Study of silicon photomultiplier performance in external electric fields
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
Institute of Physics Publishing (IOP)
1748-0221
17480221
shingle_catch_all_4 Study of silicon photomultiplier performance in external electric fields
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler
Institute of Physics Publishing (IOP)
1748-0221
17480221
shingle_title_1 Study of silicon photomultiplier performance in external electric fields
shingle_title_2 Study of silicon photomultiplier performance in external electric fields
shingle_title_3 Study of silicon photomultiplier performance in external electric fields
shingle_title_4 Study of silicon photomultiplier performance in external electric fields
timestamp 2025-06-30T23:36:49.526Z
titel Study of silicon photomultiplier performance in external electric fields
titel_suche Study of silicon photomultiplier performance in external electric fields
topic U
uid ipn_articles_6333415