Study of silicon photomultiplier performance in external electric fields
Publication Date: |
2018-09-18
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Publisher: |
Institute of Physics Publishing (IOP)
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Electronic ISSN: |
1748-0221
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Topics: |
Physics
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Published by: |
_version_ | 1836399051009949696 |
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autor | X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler |
beschreibung | We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. |
citation_standardnr | 6333415 |
datenlieferant | ipn_articles |
feed_id | 66992 |
feed_publisher | Institute of Physics Publishing (IOP) |
feed_publisher_url | http://www.iop.org/ |
insertion_date | 2018-09-18 |
journaleissn | 1748-0221 |
publikationsjahr_anzeige | 2018 |
publikationsjahr_facette | 2018 |
publikationsjahr_intervall | 7984:2015-2019 |
publikationsjahr_sort | 2018 |
publisher | Institute of Physics Publishing (IOP) |
quelle | Journal of Instrumentation |
relation | http://iopscience.iop.org/1748-0221/13/09/T09006 |
search_space | articles |
shingle_author_1 | X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler |
shingle_author_2 | X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler |
shingle_author_3 | X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler |
shingle_author_4 | X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler |
shingle_catch_all_1 | Study of silicon photomultiplier performance in external electric fields We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler Institute of Physics Publishing (IOP) 1748-0221 17480221 |
shingle_catch_all_2 | Study of silicon photomultiplier performance in external electric fields We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler Institute of Physics Publishing (IOP) 1748-0221 17480221 |
shingle_catch_all_3 | Study of silicon photomultiplier performance in external electric fields We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler Institute of Physics Publishing (IOP) 1748-0221 17480221 |
shingle_catch_all_4 | Study of silicon photomultiplier performance in external electric fields We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A. Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D. Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner, A. Burenkov, L. Cao, W.R. Cen, C. Chambers, S.A. Charlebois, M. Chiu, B. Cleveland, M. Coon, M. Côté, A. Craycraft, W. Cree, J. Dalmasson, T. Daniels, L. Darroch, S.J. Daugherty, J. Daughhetee, S. Delaquis, A. Der Mesrobian-Kabakian, R. De; Voe, J. Dilling, Y.Y. Ding, M.J. Dolinski, A. Dragone, J. Echevers, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Feyzbakhsh, P. Fierlinger, R. Fontaine, D. Fudenberg, G. Gallina, G. Giacomini, R. Gornea, G. Gratta, E.V. Hansen, D. Harris, M. Heffner, E. W. Hoppe, J. Hößl, A. House, P. Hufschmidt, M. Hughes, Y. Ito, A. Iverson, A. Jamil, C. Jessiman, M.J. Jewell, X.S. Jiang, A. Karelin, L.J. Kaufman, D. Kodroff, T. Koffas, S. Kravitz, R. Krücken, A. Kuchenkov, K.S. Kumar, Y. Lan, A. Larson, D.S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, Y.H. Lin, R. Mac; Lellan, T. Michel, M. Moe, B. Mong, D.C. Moore, K. Murray, R.J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, M. Oriunno, J.L. Orrell, G. S. Ortega, I. Ostrovskiy, C.T. Overman, S. Parent, A. Piepke, A. Pocar, J.-F. Pratte, D. Qiu, V. Radeka, E. Raguzin, T. Rao, S. Rescia, F. Retière, A. Robinson, T. Rossignol, P.C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, S. Schmidt, J. Schneider, D. Sinclair, K. Skarpaas VIII, A.K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, M. Tarka, J. Todd, T.I. Totev, R. Tsang, T. Tsang, B. Veenstra, V. Veeraraghavan, G. Visser, J.-L. Vuilleumier, M. Wagenpfeil, Q. Wang, J. Watkins, M. Weber, W. Wei, U. Wichoski, G. Wrede, S.X. Wu, W.H. Wu, Q. Xia, L. Yang, Y.-R. Yen, O. Zeldovich, J. Zhao, Y. Zhou and T. Ziegler Institute of Physics Publishing (IOP) 1748-0221 17480221 |
shingle_title_1 | Study of silicon photomultiplier performance in external electric fields |
shingle_title_2 | Study of silicon photomultiplier performance in external electric fields |
shingle_title_3 | Study of silicon photomultiplier performance in external electric fields |
shingle_title_4 | Study of silicon photomultiplier performance in external electric fields |
timestamp | 2025-06-30T23:36:49.526Z |
titel | Study of silicon photomultiplier performance in external electric fields |
titel_suche | Study of silicon photomultiplier performance in external electric fields |
topic | U |
uid | ipn_articles_6333415 |