Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature
| Publication Date: |
2018-08-17
|
|---|---|
| Publisher: |
Institute of Physics (IOP)
|
| Print ISSN: |
1757-8981
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| Electronic ISSN: |
1757-899X
|
| Topics: |
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
|
| Published by: |
| _version_ | 1836399033058328577 |
|---|---|
| autor | F H Wang, H S Jhuang, H W Liu and T K Kang |
| beschreibung | Doped zinc oxide (ZnO) thin films can be used as transparent conducting electrodes for various optoelectronic device such as flat panel displays andphotovoltaic cells. The present study investigates the effect of substrate temperature on Ga and F co-doped ZnO (GFZO) thin films.The GFZO thin films were deposited on glass substrates by RF magnetron sputtering in CF 4 /Ar atmosphere with a ZnO:Ga 2 O 3 (3 wt%) target. The structural, electrical, and optical properties of the samples have been observed and analyzed by x-ray diffraction, field emissionscanning electron microscopy, Hall measurements, and UV-visible spectrophotometry. All the GFZO thin films showed the highly c-axis-oriented phase and their average visible transmittances were over 91%. The electrical resistivity of the samples significantly decreased by an order of magnitude to 6.47×10 −4 Ω-cm as the substrate temperature raised from room temperature to 200 °C. The maximum carrier c... |
| citation_standardnr | 6320556 |
| datenlieferant | ipn_articles |
| feed_id | 123476 |
| feed_publisher | Institute of Physics (IOP) |
| feed_publisher_url | http://www.iop.org/ |
| insertion_date | 2018-08-17 |
| journaleissn | 1757-899X |
| journalissn | 1757-8981 |
| publikationsjahr_anzeige | 2018 |
| publikationsjahr_facette | 2018 |
| publikationsjahr_intervall | 7984:2015-2019 |
| publikationsjahr_sort | 2018 |
| publisher | Institute of Physics (IOP) |
| quelle | IOP Conference Series: Materials Science and Engineering |
| relation | http://iopscience.iop.org/1757-899X/381/1/012057 |
| search_space | articles |
| shingle_author_1 | F H Wang, H S Jhuang, H W Liu and T K Kang |
| shingle_author_2 | F H Wang, H S Jhuang, H W Liu and T K Kang |
| shingle_author_3 | F H Wang, H S Jhuang, H W Liu and T K Kang |
| shingle_author_4 | F H Wang, H S Jhuang, H W Liu and T K Kang |
| shingle_catch_all_1 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature Doped zinc oxide (ZnO) thin films can be used as transparent conducting electrodes for various optoelectronic device such as flat panel displays andphotovoltaic cells. The present study investigates the effect of substrate temperature on Ga and F co-doped ZnO (GFZO) thin films.The GFZO thin films were deposited on glass substrates by RF magnetron sputtering in CF 4 /Ar atmosphere with a ZnO:Ga 2 O 3 (3 wt%) target. The structural, electrical, and optical properties of the samples have been observed and analyzed by x-ray diffraction, field emissionscanning electron microscopy, Hall measurements, and UV-visible spectrophotometry. All the GFZO thin films showed the highly c-axis-oriented phase and their average visible transmittances were over 91%. The electrical resistivity of the samples significantly decreased by an order of magnitude to 6.47×10 −4 Ω-cm as the substrate temperature raised from room temperature to 200 °C. The maximum carrier c... F H Wang, H S Jhuang, H W Liu and T K Kang Institute of Physics (IOP) 1757-8981 17578981 1757-899X 1757899X |
| shingle_catch_all_2 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature Doped zinc oxide (ZnO) thin films can be used as transparent conducting electrodes for various optoelectronic device such as flat panel displays andphotovoltaic cells. The present study investigates the effect of substrate temperature on Ga and F co-doped ZnO (GFZO) thin films.The GFZO thin films were deposited on glass substrates by RF magnetron sputtering in CF 4 /Ar atmosphere with a ZnO:Ga 2 O 3 (3 wt%) target. The structural, electrical, and optical properties of the samples have been observed and analyzed by x-ray diffraction, field emissionscanning electron microscopy, Hall measurements, and UV-visible spectrophotometry. All the GFZO thin films showed the highly c-axis-oriented phase and their average visible transmittances were over 91%. The electrical resistivity of the samples significantly decreased by an order of magnitude to 6.47×10 −4 Ω-cm as the substrate temperature raised from room temperature to 200 °C. The maximum carrier c... F H Wang, H S Jhuang, H W Liu and T K Kang Institute of Physics (IOP) 1757-8981 17578981 1757-899X 1757899X |
| shingle_catch_all_3 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature Doped zinc oxide (ZnO) thin films can be used as transparent conducting electrodes for various optoelectronic device such as flat panel displays andphotovoltaic cells. The present study investigates the effect of substrate temperature on Ga and F co-doped ZnO (GFZO) thin films.The GFZO thin films were deposited on glass substrates by RF magnetron sputtering in CF 4 /Ar atmosphere with a ZnO:Ga 2 O 3 (3 wt%) target. The structural, electrical, and optical properties of the samples have been observed and analyzed by x-ray diffraction, field emissionscanning electron microscopy, Hall measurements, and UV-visible spectrophotometry. All the GFZO thin films showed the highly c-axis-oriented phase and their average visible transmittances were over 91%. The electrical resistivity of the samples significantly decreased by an order of magnitude to 6.47×10 −4 Ω-cm as the substrate temperature raised from room temperature to 200 °C. The maximum carrier c... F H Wang, H S Jhuang, H W Liu and T K Kang Institute of Physics (IOP) 1757-8981 17578981 1757-899X 1757899X |
| shingle_catch_all_4 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature Doped zinc oxide (ZnO) thin films can be used as transparent conducting electrodes for various optoelectronic device such as flat panel displays andphotovoltaic cells. The present study investigates the effect of substrate temperature on Ga and F co-doped ZnO (GFZO) thin films.The GFZO thin films were deposited on glass substrates by RF magnetron sputtering in CF 4 /Ar atmosphere with a ZnO:Ga 2 O 3 (3 wt%) target. The structural, electrical, and optical properties of the samples have been observed and analyzed by x-ray diffraction, field emissionscanning electron microscopy, Hall measurements, and UV-visible spectrophotometry. All the GFZO thin films showed the highly c-axis-oriented phase and their average visible transmittances were over 91%. The electrical resistivity of the samples significantly decreased by an order of magnitude to 6.47×10 −4 Ω-cm as the substrate temperature raised from room temperature to 200 °C. The maximum carrier c... F H Wang, H S Jhuang, H W Liu and T K Kang Institute of Physics (IOP) 1757-8981 17578981 1757-899X 1757899X |
| shingle_title_1 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature |
| shingle_title_2 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature |
| shingle_title_3 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature |
| shingle_title_4 | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature |
| timestamp | 2025-06-30T23:36:29.108Z |
| titel | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature |
| titel_suche | Radio Frequency Sputter Deposition of Ga and F Co-Doped ZnO Thin Films: Effects of Substrate Temperature |
| topic | ZL |
| uid | ipn_articles_6320556 |