Ba8ZnTa6O24: A New High Q Dielectric Perovskite

Thirumal, M. ; Davies, P. K.

Oxford, UK : Blackwell Science Inc
Published 2005
ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Physics
Notes:
The hexagonal perovskite, Ba8ZnTa6O24, was prepared in single-phase form and was found to be a stable secondary phase, formed as a result of the loss of ZnO from Ba(Zn1/3Ta2/3)O3 microwave dielectrics. The experimental and calculated X-ray patterns of Ba8ZnTa6O24 indicate it is isostructural with Ba8Ta6NiO24 with an 8H (cchc)2 close-packed BaO3 stacking sequence and the lattice parameters, a=10.0825(14), c=19.0587(38)Å. High-density ceramics of Ba8ZnTa6O24 could be prepared at temperatures considerably lower (1400°C) than those used to sinter pure Ba(Zn1/3Ta2/3)O3, and exhibit very good microwave dielectric properties with ɛ=30.5, Qf=62 300, and τf=+36 ppm/°C at 8.9 GHz.
Type of Medium:
Electronic Resource
URL: