Effects of thermal annealing on Si-doped GaAs grown by molecular beam epitaxy
Shinozaki, K. ; Mannoh, M. ; Nomura, Y. ; Mihara, M. ; Ishii, M.
[S.l.] : American Institute of Physics (AIP)
Published 1985
[S.l.] : American Institute of Physics (AIP)
Published 1985
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Low-temperature (∼4 K) photoluminescence has been studied on as-grown and thermally annealed Si-doped GaAs grown by molecular beam epitaxy. The peak intensities of the defect-related emissions, due to the defect-induced bound exciton (d, X) and the defect complex (d) are decreased by thermal annealing. On the other hand, Hall measurements show that free carrier concentrations are decreased only slightly by thermal annealing.
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| Type of Medium: |
Electronic Resource
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| URL: |