Effect of mismatch strain on band gap in III-V semiconductors
Kuo, C. P. ; Vong, S. K. ; Cohen, R. M. ; Stringfellow, G. B.
[S.l.] : American Institute of Physics (AIP)
Published 1985
[S.l.] : American Institute of Physics (AIP)
Published 1985
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Interfacial elastic strain induced by the lattice parameter mismatch between epilayer and substrate results in significant energy–band-gap shifts for III-V alloys. The epilayers used in this study are GaxIn1−xAs on (100) InP and GaxIn1−xP on (100) GaAs prepared by organometallic vapor phase epitaxy. For layer thicknesses between 1 and 1.5 μm, and Δas.f./a0≤3.5×10−3 the misfit strain is assumed to be accommodated elastically. The energy–band-gap shifts are determined by comparing the photoluminescence peak energies of the epilayers with the best experimental relation of band gap versus composition for unstrained layers. A calculation of the energy–band-gap shift due to biaxial stress made for GaxIn1−xAs is found to agree with the photoluminescence measurements. In addition, a comparison of the energy–band-gap shift for GaxIn1−xP shows a clearly different dependency for tensile and compressive strain, in good agreement with calculated results.
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| Type of Medium: |
Electronic Resource
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| URL: |